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Model VBT2080C-E3/4W
Description Dual Trench MOS Barrier Schottky Rectifier
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.95  yuan 3.95yuan
5+:
$ 5.3271
25+:
$ 4.9325
50+:
$ 4.6563
100+:
$ 4.5379
500+:
$ 4.4590
2500+:
$ 4.3603
5000+:
$ 4.3209
10000+:
$ 4.2617
Quantity
5+
25+
50+
100+
500+
Price
$5.3271
$4.9325
$4.6563
$4.5379
$4.4590
Price $ 5.3271 $ 4.9325 $ 4.6563 $ 4.5379 $ 4.4590
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1025) Minimum order quantity(5)
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Technical parameters/forward voltage: 810 mV

Technical parameters/forward current: 20 A

Technical parameters/Maximum forward surge current (Ifsm): 100 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Technical parameters/operating temperature: 150℃ (Max)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: 55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STPS20SM80CG-TR STPS20SM80CG-TR ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STPS20SM80CG-TR 小信号肖特基二极管, 双共阴极, 80 V, 20 A, 945 mV, 220 A, 175 °C
PDF
VBT2080C-E3/8W VBT2080C-E3/8W Vishay Intertechnology 功能相似 TO-263
双Trench MOS势垒肖特基整流器 Dual Trench MOS Barrier Schottky Rectifier
VBT2080C-E3/8W VBT2080C-E3/8W Vishay Semiconductor 功能相似 TO-263-3
双Trench MOS势垒肖特基整流器 Dual Trench MOS Barrier Schottky Rectifier
PDF
VBT2080C-E3/8W VBT2080C-E3/8W VISHAY 功能相似 TO-263
双Trench MOS势垒肖特基整流器 Dual Trench MOS Barrier Schottky Rectifier
PDF

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