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Model VB20150S-E3/8W
Description TMBS - Trench MOS Barrier Schottky rectifier, up to 20A, Vishay Semiconductor's Trench MOS Barrier Schottky (TMBS) rectifier series includes patented Trench structures. Compared with planar Schottky rectifiers, TMBS rectifiers can provide multiple advantages. When the working voltage is 45V or higher, the planar Schottky rectifier loses its advantage of fast conversion speed and the low forward voltage drop reaches an extreme level. The patented TMBS structure solves these problems by reducing the injection of carriers into the drift region to the greatest extent possible, thereby minimizing the accumulation of charges and improving conversion speed. ###The patented Trench structure improves the efficiency of AC/DC switch mode power supplies and DC/DC converters with high power density and low forward voltage. It is a Schottky rectifier, Vishay Semiconductor
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Brand: Vishay Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
8.79  yuan 8.79yuan
10+:
$ 10.5492
100+:
$ 10.0217
500+:
$ 9.6701
1000+:
$ 9.6525
2000+:
$ 9.5822
5000+:
$ 9.4943
7500+:
$ 9.4240
10000+:
$ 9.3888
Quantity
10+
100+
500+
1000+
2000+
Price
$10.5492
$10.0217
$9.6701
$9.6525
$9.5822
Price $ 10.5492 $ 10.0217 $ 9.6701 $ 9.6525 $ 9.5822
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4317) Minimum order quantity(10)
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Technical parameters/forward voltage: 1.43V @20A

Technical parameters/forward current: 20 A

Technical parameters/Maximum forward surge current (Ifsm): 160 A

Technical parameters/forward current (Max): 20 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/operating temperature: -55℃ ~ 150℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.45 mm

External dimensions/width: 9.14 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB20150S-E3/4W VB20150S-E3/4W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器超低VF = 0.55 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
PDF
VB20150S-E3/4W VB20150S-E3/4W Vishay Intertechnology 完全替代 TO-263
高压Trench MOS势垒肖特基整流器超低VF = 0.55 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

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