Technical parameters/forward voltage: 1.43 V
Technical parameters/Maximum reverse voltage (Vrrm): 150 V
Technical parameters/forward current: 20000 mA
Technical parameters/Maximum forward surge current (Ifsm): 160 A
Technical parameters/forward voltage (Max): 1.43 V
Technical parameters/forward current (Max): 20 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.45 mm
External dimensions/width: 9.14 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 800
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VB20150S-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.55 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
|
||
VB20150S-E3/4W
|
Vishay Intertechnology | 完全替代 | TO-263 |
高压Trench MOS势垒肖特基整流器超低VF = 0.55 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
|
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