Technical parameters/forward voltage: 1.1V @30A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VB30120S-E3/4W
|
Vishay Semiconductor | 完全替代 | TO-263-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.43 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
|
||
VB30120S-E3/4W
|
VISHAY | 完全替代 | TO-263-3 |
高压Trench MOS势垒肖特基整流器超低VF = 0.43 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
|
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