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Model VB30120S-E3/4W
Description High voltage Trench MOS barrier Schottky rectifier with ultra-low VF=0.43 V IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
Product QR code
Brand: VISHAY
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.39  yuan 5.39yuan
10+:
$ 6.4704
100+:
$ 6.1469
500+:
$ 5.9312
1000+:
$ 5.9204
2000+:
$ 5.8773
5000+:
$ 5.8234
7500+:
$ 5.7802
10000+:
$ 5.7587
Quantity
10+
100+
500+
1000+
2000+
Price
$6.4704
$6.1469
$5.9312
$5.9204
$5.8773
Price $ 6.4704 $ 6.1469 $ 5.9312 $ 5.9204 $ 5.8773
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1461) Minimum order quantity(10)
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Technical parameters/forward voltage: 1.1 V

Technical parameters/Maximum reverse voltage (Vrrm): 120 V

Technical parameters/forward current: 30 A

Technical parameters/Maximum forward surge current (Ifsm): 300 A

Technical parameters/forward voltage (Max): 1.1V @30A

Technical parameters/forward current (Max): 30 A

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
VB30120S-E3/8W VB30120S-E3/8W Vishay Semiconductor 完全替代 TO-263-3
高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
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