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Model NAND01GW3B2AN6
Description 1Gigabit, 2 Gigabit, 2112 bytes/1056 word pages, 1.8V/3V, NAND Flash Memory 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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Brand: ST Microelectronics
Packaging TSOP-48
Delivery time
Packaging method Tray
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7282) Minimum order quantity(1)
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Technical parameters/digits: 8

Technical parameters/access time (Max): 25000 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): 40 ℃

Technical parameters/power supply voltage (Max): 3.6 V

Technical parameters/power supply voltage (Min): 2.7 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 48

Encapsulation parameters/Encapsulation: TSOP-48

External dimensions/packaging: TSOP-48

Physical parameters/operating temperature: 40℃ ~ 85℃

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tray

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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适配器型号: DX1004 支持的编程器: SUPERPRO/6100N
适配器型号: DX1004 支持的编程器: SUPERPRO/6104N

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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FLASH/K9F1G08U0D-SCB0 托盘
NAND01GW3B2AN6E NAND01GW3B2AN6E Micron 类似代替 TSOP
NAND闪存 2.7-3.6V 1G (128Mx8)
NAND01GW3B2AN6E NAND01GW3B2AN6E ST Microelectronics 类似代替 TSOP-48
NAND闪存 2.7-3.6V 1G (128Mx8)
PDF
NAND01GW3B2BN6E NAND01GW3B2BN6E Micron 功能相似 TSOP
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF
NAND01GW3B2BN6E NAND01GW3B2BN6E Numonyx 功能相似 TSOP
1千兆， 2千兆， 2112字节/ 1056字页， 1.8V / 3V ， NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF

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