Technical parameters/digits: 8
Technical parameters/access time (Max): 25000 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 48
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NAND01GW3B2CN6E
|
Numonyx | 完全替代 | TSOP-48 |
MICRON NAND01GW3B2CN6E 闪存, 1 Gbit, 128K x 8位, 并行, TSOP, 48 引脚
|
||
S34ML01G100TFI000
|
Cypress Semiconductor | 功能相似 | TSOP-48 |
NAND 闪存，Spansion **Spansion** 闪存系列 (**ML NAND**) 在 3V 工作时提供高性能。 Spansion ML NAND 闪存产品的存储器大小跨度为 1Gb 至 4Gb。 SLC NAND 电池为您的嵌入式数据存储应用需求提供可靠的解决方案。 除此之外，NAND 闪存还带有并行接口，采用 TSOP 或 BGA 封装形式。 Spansion ML Nand 闪存组织格式范围： 128M x 8 位，64M x 16 位 - **S34ML01G100BHI000**，**S34ML01G100TFI000** 128M x 16 位，256M x 8 位 - **S34ML02G100BHI000**，**S34ML02G100TFI000** 256M x 16 位，512M x 8 位 - **S34ML04G100BHI000**，**S34ML04G100TFI000** ### NAND 闪存
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