Technical parameters/drain source resistance: 33.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/rise time: 32 ns
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4966DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
SI4966DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
|
||
SI4967DY
|
Vishay Siliconix | 功能相似 | SO |
Transistor,
|
||
SI4967DY
|
Vishay Semiconductor | 功能相似 | SO |
Transistor,
|
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