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Model SI6954DQ-T1-E3
Description Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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Brand: Vishay Siliconix
Packaging TSSOP
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9823) Minimum order quantity(1)
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Technical parameters/drain source resistance: 65.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.00 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): -3.90 A to 3.90 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TSSOP

External dimensions/packaging: TSSOP

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI6954DQ-T1 SI6954DQ-T1 Vishay Semiconductor 完全替代 TSSOP
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
SI6954DQ-T1 SI6954DQ-T1 Vishay Siliconix 完全替代 TSSOP
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

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