Technical parameters/drain source resistance: | 65.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.00 W |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | -3.90 A to 3.90 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | TSSOP |
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Dimensions/Packaging: | TSSOP |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6954DQ-T1-E3
|
Vishay Siliconix | 完全替代 | TSSOP |
Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
|
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