Technical parameters/drain source resistance: 120 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.00 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -3.50 A to 3.50 A
Technical parameters/rise time: 10.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
Stk New And Original
|
|||
SI9407AEY
|
Vishay Semiconductor | 类似代替 | 8 |
Stk New And Original
|
||
SI9407AEY
|
Vishay Siliconix | 类似代替 | SOT |
Stk New And Original
|
||
SI9407AEY
|
Temic | 类似代替 |
Stk New And Original
|
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