Technical parameters/polarity: P-Channel
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT
External dimensions/packaging: SOT
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
Stk New And Original
|
|||
SI9407AEY
|
Vishay Semiconductor | 类似代替 | 8 |
Stk New And Original
|
||
SI9407AEY
|
Vishay Siliconix | 类似代替 | SOT |
Stk New And Original
|
||
SI9407AEY
|
Temic | 类似代替 |
Stk New And Original
|
|||
SI9407AEY-T1-E3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ω; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF
|
||
SI9407AEY-T1-E3
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ω; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF
|
||
SI9407AEY-T1-E3
|
Vishay Siliconix | 类似代替 | SOIC-8 |
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ω; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF
|
||
SI9407AEY-T1-E3
|
VISHAY | 类似代替 | SO |
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ω; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF
|
||
SI9407AEY-T1-GE3
|
Vishay Semiconductor | 功能相似 |
MOSFET 60V 3.5A 3W 120mohm @ 10V
|
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