Technical parameters/number of output interfaces: 1
Technical parameters/drain source resistance: 120 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 8300 mW
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/output current (Max): 7 A
Technical parameters/number of inputs: 1
Technical parameters/dissipated power (Max): 8300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP
External dimensions/packaging: SOP
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VNS3NV04D13TR
|
ST Microelectronics | 功能相似 | SOIC-8 |
OMNIFET II完全autoprotected功率MOSFET OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
|
||
VNS3NV04DTR
|
ST Microelectronics | 功能相似 | SOP |
MOSFET POWER AUTOPROTECT 8-SOIC
|
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