Technical parameters/number of output interfaces: 2
Technical parameters/power supply current: 0.1 mA
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 120 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 4000 mW
Technical parameters/leakage source breakdown voltage: 45.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/output current (Max): 3.5 A
Technical parameters/output current (Min): 3.5 A
Technical parameters/dissipated power (Max): 4000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VNS3NV04
|
ST Microelectronics | 功能相似 | SOP |
“ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
|
||
VNS3NV04DPTR-E
|
ST Microelectronics | 完全替代 | SOIC-8 |
40V,120mΩ,3.5A,双N沟道自带保护功率MOSFET
|
||
VNS3NV04DPTR-E
|
ST Microelectronics | 完全替代 | SOIC-8 |
40V,120mΩ,3.5A,双N沟道自带保护功率MOSFET
|
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