Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 60 @2A, 2V
Technical parameters/rated power (Max): 325 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: XDFN-3
External dimensions/packaging: XDFN-3
Physical parameters/operating temperature: 150℃ (TJ)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5230QAZ
|
NXP | 类似代替 | XDFN-3 |
单晶体管 双极, AEC-Q101, PNP, -30 V, 170 MHz, 325 mW, -2 A, 60 hFE
|
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