Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 2A |
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Technical parameters/minimum current amplification factor (hFE): | 60 @2A, 2V |
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Technical parameters/rated power (Max): | 325 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | XDFN-3 |
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Dimensions/Packaging: | XDFN-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5230QA
|
Nexperia | 完全替代 | XDFN-3 |
NXP PBSS5230QA 单晶体管 双极, AEC-Q101, PNP, -30 V, 170 MHz, 325 mW, -2 A, 60 hFE
|
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