Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 20 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/rise time: 8 ns
Technical parameters/descent time: 32 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4450DY
|
Vishay Siliconix | 功能相似 | SOIC |
Transistor NPN MOS SI4450DY SILICONIX Ampere=8V=60 N8
|
||
SI4450DY
|
VISHAY | 功能相似 | SOIC-8 |
Transistor NPN MOS SI4450DY SILICONIX Ampere=8V=60 N8
|
||
SI4450DY
|
Fairchild | 功能相似 | SO-8 |
Transistor NPN MOS SI4450DY SILICONIX Ampere=8V=60 N8
|
||
SI4450DY-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
||
SI4450DY-E3
|
Vishay Siliconix | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
||
SI4450DY-T1
|
VISHAY | 功能相似 | SOIC |
Trans MOSFET N-CH 60V 7.5A 8Pin SOIC
|
||
SI4450DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
||
SI4450DY-T1-E3
|
VISHAY | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
||
SI4450DY_NL
|
Fairchild | 功能相似 | SOIC |
SOIC N-CH 60V 8A
|
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