Technical parameters/rated power: | 2.5 W |
|
Technical parameters/drain source resistance: | 24.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.50 W |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 7.50 A |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SO |
|
Dimensions/Packaging: | SO |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4450DY
|
Vishay Siliconix | 功能相似 | SOIC |
60V N沟道PowerTrench MOSFET的 60V N-Channel PowerTrench MOSFET
|
||
SI4450DY
|
VISHAY | 功能相似 | SOIC-8 |
60V N沟道PowerTrench MOSFET的 60V N-Channel PowerTrench MOSFET
|
||
SI4450DY
|
Fairchild | 功能相似 | SO-8 |
60V N沟道PowerTrench MOSFET的 60V N-Channel PowerTrench MOSFET
|
||
SI4450DY-T1-E3
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
||
SI4450DY-T1-E3
|
VISHAY | 功能相似 | SO |
MOSFET 60V 7.5A 2.5W
|
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