Technical parameters/number of circuits: 1
Technical parameters/conversion rate: 1.80 kV/μs
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CLC5523IM
|
National Semiconductor | 完全替代 | SOIC |
低功耗,可变增益放大器 Low-Power, Variable Gain Amplifier
|
||
|
|
National Semiconductor | 类似代替 | SOP |
Wideband, Low Power, Variable Gain Amplifier 8-SOIC -40℃ to 85℃
|
||
LMH6504MAX
|
TI | 类似代替 | SOIC-8 |
Wideband, Low Power, Variable Gain Amplifier 8-SOIC -40℃ to 85℃
|
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