Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 1.60 A
Technical parameters/polarity: N-CH
Technical parameters/product series: IRFL4310
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 330pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP372
|
Infineon | 类似代替 | SOT-223 |
SIPMOS小信号晶体管 SIPMOS Small-Signal Transistor
|
||
IRFL4310TRPBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL4310TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
|
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