Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 2.20 A |
|
Technical parameters/drain source resistance: | 200 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.1 W |
|
Technical parameters/product series: | IRFL4310 |
|
Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Continuous drain current (Ids): | 1.60 A |
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Technical parameters/rise time: | 18.0 ns |
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Technical parameters/Input capacitance (Ciss): | 330pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Packaging: | TO-261-4 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDT1600N10ALZ
|
Fairchild | 功能相似 | SOT-223-4 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDT1600N10ALZ, 5.6 A, Vds=100 V, 3针+焊片 SOT-223封装
|
||
IRFL4310PBF
|
Infineon | 类似代替 | TO-261-4 |
INTERNATIONAL RECTIFIER IRFL4310PBF 场效应管, MOSFET, N
|
||
IRFL4310PBF
|
International Rectifier | 类似代替 | TO-261-4 |
INTERNATIONAL RECTIFIER IRFL4310PBF 场效应管, MOSFET, N
|
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