Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 139 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 550 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 1800pF @100V(Vds)
Technical parameters/rated power (Max): 139 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 16.13 mm
External dimensions/width: 5.21 mm
External dimensions/height: 21.1 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP23NM50N
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STW23NM50N
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW23NM50N 晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
|
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