Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.162 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 1330pF @50V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/descent time: 29 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/length: 15.75 mm
External dimensions/width: 5.15 mm
External dimensions/height: 20.15 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP23NM50N
|
ST Microelectronics | 完全替代 | TO-220-3 |
N 通道 MDmesh™，500V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STW20NM50FD
|
ST Microelectronics | 类似代替 | TO-247-3 |
STMICROELECTRONICS STW20NM50FD 晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review