Technical parameters/polarity: Dual N-Channel
Technical parameters/product series: IRF7341Q
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/Continuous drain current (Ids): 5.10 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STS4DNF60L
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS4DNF60L 双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
|
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