Technical parameters/dissipated power: 1.6 W
Technical parameters/rise time: 25 ns
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DN3525N8-G
|
Supertex | 功能相似 | SOT-89-3 |
MICROCHIP DN3525N8-G 晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
|
||
DN3525N8-G
|
Microchip | 功能相似 | SOT-89-3 |
MICROCHIP DN3525N8-G 晶体管, MOSFET, N沟道, 360 mA, 250 V, 6 ohm, 0 V
|
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