Technical parameters/rated power: 1.6 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 6 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Communication and Networking, Power Management, Power Management, Communications&Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Supertex | 功能相似 | SOT-89 |
Trans MOSFET N-CH 250V 0.36A 4Pin(3+Tab) SOT-89
|
||
DN3525N8
|
Suptertex | 功能相似 |
Trans MOSFET N-CH 250V 0.36A 4Pin(3+Tab) SOT-89
|
|||
DN3525N8
|
Microchip | 功能相似 | SOT-89-3 |
Trans MOSFET N-CH 250V 0.36A 4Pin(3+Tab) SOT-89
|
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