Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 50A
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL9N312AD3ST
|
Fairchild | 功能相似 | TO-252 |
N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
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