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Model ISL9N312AD3ST
Description NChannel Logic Level PWM Optimization UltraFET Channel Power MOSFET N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Product QR code
Brand: Fairchild
Packaging TO-252
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.67  yuan 0.67yuan
10+:
$ 0.9032
50+:
$ 0.8563
100+:
$ 0.8229
300+:
$ 0.8028
500+:
$ 0.7827
1000+:
$ 0.7627
2500+:
$ 0.7326
5000+:
$ 0.7259
Quantity
10+
50+
100+
300+
500+
Price
$0.9032
$0.8563
$0.8229
$0.8028
$0.7827
Price $ 0.9032 $ 0.8563 $ 0.8229 $ 0.8028 $ 0.7827
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6725) Minimum order quantity(10)
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Technical parameters/drain source resistance: 20.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 75.0 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 50.0 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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FDD8882 FDD8882 Rochester 功能相似 TO-252
PowerTrench® N 通道 MOSFET，20A 至 59.9A，Fairchild Semiconductor ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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ISL9N312AD3ST_NL ISL9N312AD3ST_NL Fairchild 功能相似 TO-252
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

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