Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 3A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 290pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF7103QTR
|
Infineon | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IRF7103PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7103PBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 130 mohm, 10 V, 3 V
|
||
IRF7103TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
|
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