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Model AUIRF7103QTR

Description PChannel-12 V 1.3 W 10 nC power Mosfet surface mount - MICRO-3

Brand: Infineon

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	2.4 W
Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.13 Ω
Technical parameters/polarity:	Dual N-Channel
Technical parameters/dissipated power:	2.4 W
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	50 V
Technical parameters/Continuous drain current (Ids):	3A
Technical parameters/rise time:	1.7 ns
Technical parameters/Input capacitance (Ciss):	255pF @25V(Vds)
Technical parameters/rated power (Max):	2.4 W
Technical parameters/descent time:	2.3 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.4 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Automotive, Solenoid Injection, Port Injection
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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IRF7103TRPBF	Infineon	类似代替	SOIC-8	INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V	PDF