Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.4 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Continuous drain current (Ids): 3A
Technical parameters/Input capacitance (Ciss): 255pF @25V(Vds)
Technical parameters/rated power (Max): 2.4 W
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Port Injection, Automotive, Solenoid Injection, automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF7103QTR
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Infineon | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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IRF7103PBF
|
International Rectifier | 类似代替 | SOIC-8 |
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IRF7103TRPBF
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Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
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