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Description INFINEON AUIRF7103Q Dual Field Effect Transistor, MOSFET, Dual N-channel, 3 A, 50 V, 0.13 ohm, 10 V, 1 V
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Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method
Standard packaging quantity 1
5.31  yuan 5.31yuan
10+:
$ 6.3684
100+:
$ 6.0500
500+:
$ 5.8377
1000+:
$ 5.8271
2000+:
$ 5.7846
5000+:
$ 5.7316
7500+:
$ 5.6891
10000+:
$ 5.6679
Quantity
10+
100+
500+
1000+
2000+
Price
$6.3684
$6.0500
$5.8377
$5.8271
$5.7846
Price $ 6.3684 $ 6.0500 $ 5.8377 $ 5.8271 $ 5.7846
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1497) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.13 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 2.4 W

Technical parameters/threshold voltage: 1 V

Technical parameters/drain source voltage (Vds): 50 V

Technical parameters/Continuous drain current (Ids): 3A

Technical parameters/Input capacitance (Ciss): 255pF @25V(Vds)

Technical parameters/rated power (Max): 2.4 W

Technical parameters/operating temperature (Max): 175 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Manufacturing Applications: Port Injection, Automotive, Solenoid Injection, automotive

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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INFINEON IRF7103PBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 130 mohm, 10 V, 3 V
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IRF7103TRPBF IRF7103TRPBF Infineon 类似代替 SOIC-8
INFINEON IRF7103TRPBF 双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
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