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Model 2N6849

Description Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Brand: Harris

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Model	Brand	Similarity	Encapsulation	Introduction	Data manual
2N6849	Infineon	功能相似	TO-205	晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V	PDF
2N6849	Microsemi	功能相似	TO-205-3	晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V	PDF
2N6849	Semelab	功能相似	TO-205	晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V	PDF
2N6849	Harris	功能相似		晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V	PDF
2N6849-JQR-BR1	Semelab	功能相似	BCY	6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
IRFF9130	Intersil	功能相似		Trans MOSFET P-CH 100V 6.5A 3Pin TO-39o	PDF
JANS2N6849	IRF	完全替代		Trans MOSFET P-CH 100V 6.5A 3Pin TO-39
JANS2N6849	International Rectifier	完全替代		Trans MOSFET P-CH 100V 6.5A 3Pin TO-39	PDF
JANTX2N6849	International Rectifier	完全替代	TO-205	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3Pin

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