Technical parameters/dissipated power: 800mW (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800mW (Ta), 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205-3
External dimensions/packaging: TO-205-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6849
|
Infineon | 功能相似 | TO-205 |
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V
|
||
2N6849
|
Microsemi | 功能相似 | TO-205-3 |
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V
|
||
2N6849
|
Semelab | 功能相似 | TO-205 |
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V
|
||
2N6849
|
Harris | 功能相似 |
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 0.3 ohm, -10 V, -4 V
|
|||
|
2N6849-JQR-BR1
|
Semelab | 功能相似 | BCY |
6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
|
IRFF9130
|
Intersil | 功能相似 |
Trans MOSFET P-CH 100V 6.5A 3Pin TO-39o
|
|||
|
JANS2N6849
|
IRF | 完全替代 |
Trans MOSFET P-CH 100V 6.5A 3Pin TO-39
|
|||
JANS2N6849
|
International Rectifier | 完全替代 |
Trans MOSFET P-CH 100V 6.5A 3Pin TO-39
|
|||
JANTX2N6849
|
International Rectifier | 完全替代 | TO-205 |
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3Pin
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review