Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 3.6 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
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SILICON PLANAR ZENER DIODES
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New Jersey Semiconductor | 功能相似 | 2 |
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1N5227A
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Microsemi | 功能相似 | DO-35 |
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SILICON PLANAR ZENER DIODES
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1N5227B
|
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Diode Zener Single 3.6V 5% 0.5W(1/2W) 2Pin DO-35
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|
CHENG-YI | 功能相似 |
Diode Zener Single 3.6V 5% 0.5W(1/2W) 2Pin DO-35
|
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1N5227B
|
先科ST | 功能相似 | DO-35 |
Diode Zener Single 3.6V 5% 0.5W(1/2W) 2Pin DO-35
|
||
1N5227B
|
Motorola | 功能相似 | DO-35 |
Diode Zener Single 3.6V 5% 0.5W(1/2W) 2Pin DO-35
|
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