Technical parameters/rated power (Max): 500 mW
Technical parameters/accuracy: ±5 %
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Catalog: Zener diode
Other/Precision: ±5%
Other/Stable Voltage Values (Typical Values): 3.6V
Other/reverse leakage current: 15uA @ 1V
Other/maximum power: 500mW
Other/Product Code: C118647
Other/Packaging Specifications: DO-35
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4729A-TR
|
LiteOn | 功能相似 | DO-41-2 |
VISHAY 1N4729A-TR 齐纳二极管, Vz:3.3V
|
||
1N5227B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
|
|
CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
|||
1N5227B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
1N5227B
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
1N5227B-TAP
|
VISHAY | 功能相似 | DO-35 |
VISHAY 1N5227B-TAP 齐纳二极管, Vz: 3.6V
|
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