Technical parameters/drain source resistance: 9.50 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB7042L
|
Fairchild | 类似代替 | TO-263 |
N沟道逻辑电平的PowerTrench MOSFET N-Channel Logic Level PowerTrench MOSFET
|
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