Technical parameters/drain source resistance: | 9.00 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 83.0 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 50.0 A |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISL9N306AS3ST
|
Fairchild | 类似代替 | TO-263 |
N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
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