Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/rise time: 35 ns
Technical parameters/descent time: 35 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM5111-1M/NOPB
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TI | 功能相似 | SOIC-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出,且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器,Texas Instruments
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LM5111-1MX/NOPB
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TI | 功能相似 | SOIC-8 |
LM5111双通道5A复合门驱动器 LM5111 Dual 5A Compound Gate Driver
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