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Technical parameters/rise/fall time: | 14ns, 12ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/Static current: | 1.00 mA |
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Technical parameters/rise time: | 25 ns |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/descent time (Max): | 25 ns |
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Technical parameters/rise time (Max): | 25 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 3.5V ~ 14V |
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Technical parameters/power supply voltage (Max): | 14 V |
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Technical parameters/power supply voltage (Min): | 3.5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM5111-1M/NOPB
|
TI | 完全替代 | SOIC-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
|
||
LM5111-1MX
|
National Semiconductor | 完全替代 | SOIC |
LM5111双通道5A复合门驱动器 LM5111 Dual 5A Compound Gate Driver
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