Technical parameters/dissipated power: 0.53 W
Technical parameters/common mode rejection ratio: 65 dB
Technical parameters/bandwidth: 1 MHz
Technical parameters/gain bandwidth product: 1 MHz
Technical parameters/input compensation voltage: 7 mV
Technical parameters/input bias current: 250 nA
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 3V ~ 32V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KA358ADTF
|
Fairchild | 功能相似 | SOIC-8 |
40 V 电源电压的运算放大器,Fairchild Semiconductor Fairchild 可实现放大器高性能设计,结合了低功率和可靠性。 ### 运算放大器,Fairchild Semiconductor
|
||
KA358ADTF
|
ON Semiconductor | 功能相似 | SOIC-8 |
40 V 电源电压的运算放大器,Fairchild Semiconductor Fairchild 可实现放大器高性能设计,结合了低功率和可靠性。 ### 运算放大器,Fairchild Semiconductor
|
||
LM258DRE4
|
TI | 功能相似 | SOIC-8 |
双运算放大器 DUAL OPERATIONAL AMPLIFIERS
|
||
LM358AM/NOPB
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LM358AM/NOPB 运算放大器, 双路, 1 MHz, 2个放大器, 0.1 V/µs, 3V 至 32V, SOIC, 8 引脚
|
||
LM358DR
|
Chipswinner | 类似代替 | SOP-8L/-40~85 |
TEXAS INSTRUMENTS LM358DR 运算放大器, 双路, 700 kHz, 2个放大器, 0.4 V/µs, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
||
LM358DR
|
ROHM Semiconductor | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LM358DR 运算放大器, 双路, 700 kHz, 2个放大器, 0.4 V/µs, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
||
LM358M/NOPB
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LM358M/NOPB 运算放大器, 双路, 1 MHz, 2个放大器, 0.1 V/µs, 3V 至 32V, SOIC, 8 引脚
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review