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Technical parameters/output current: 30mA @15V
Technical parameters/power supply current: 1 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 70 dB
Technical parameters/Input compensation drift: 7.00 µV/K
Technical parameters/bandwidth: 700 kHz
Technical parameters/conversion rate: 300 mV/μs
Technical parameters/gain bandwidth product: 700 kHz
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 20 nA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -25 ℃
Technical parameters/gain bandwidth: 0.7 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Technical parameters/power supply voltage (Max): 32 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/width: 3.91 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -25℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM258D
|
National Semiconductor | 完全替代 | 8 |
TEXAS INSTRUMENTS LM258D 运算放大器, 双路, 700 kHz, 2个放大器, 0.3 V/µs, 3V 至 32V, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
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LM258D
|
ON Semiconductor | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LM258D 运算放大器, 双路, 700 kHz, 2个放大器, 0.3 V/µs, 3V 至 32V, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
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LM258DR
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LM258DR. 运算放大器, 双路, 700 kHz, 2个放大器, 0.3 V/µs, ± 1.5V 至 ± 16V, SOIC, 8 引脚
|
||
LM258DRG4
|
TI | 类似代替 | SOIC-8 |
双运算放大器 DUAL OPERATIONAL AMPLIFIERS
|
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