Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP45TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
|
|
Fairchild | 功能相似 | TO-92 |
NPN Epitaxial Silicon Transistor
|
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