Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 350 V |
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Technical parameters/Maximum allowable collector current: | 0.3A |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-92 |
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Dimensions/Packaging: | TO-92 |
|
Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP45TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
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