Technical parameters/frequency: 300 MHz
Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 150 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 200 @1mA, 6V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC945CGBU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor KSC945CGBU , NPN 晶体管, 150 mA, Vce=50 V, HFE:40, 1 MHz, 3引脚 TO-92封装
|
||
KSC945CGTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSC945CGTA 单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE
|
||
KSC945CGTA
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSC945CGTA 单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE
|
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