Technical parameters/frequency: | 300 MHz |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 0.25 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 6V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/DC current gain (hFE): | 200 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Length: | 4.58 mm |
|
Dimensions/Width: | 3.86 mm |
|
Dimensions/Height: | 4.58 mm |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC945CGBU
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor KSC945CGBU , NPN 晶体管, 150 mA, Vce=50 V, HFE:40, 1 MHz, 3引脚 TO-92封装
|
||
KSC945CGTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSC945CGTA 单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE
|
||
KSC945CGTA
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR KSC945CGTA 单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 200 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review