Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 150 @1mA, 5V
Technical parameters/rated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3810L
|
Microsemi | 完全替代 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
JAN2N3810
|
Microsemi | 功能相似 | TO-78-6 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-78,
|
||
JAN2N3810
|
Raytheon | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-78,
|
|||
JAN2N3810
|
Microchip | 功能相似 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-78,
|
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