Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 150 @1mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Solid State Devices | 完全替代 | TO-77 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
|
|
New Jersey Semiconductor | 完全替代 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
|||
|
|
Microchip | 完全替代 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
|
|
Intersil | 完全替代 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
|||
2N3810
|
Microsemi | 完全替代 | TO-78-6 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
||
2N3810
|
InterFET | 完全替代 |
PNP硅晶体管双 PNP SILICON DUAL TRANSISTOR
|
|||
JAN2N3810
|
Microsemi | 完全替代 | TO-78-6 |
双极晶体管 - 双极结型晶体管(BJT) Small-Signal BJT
|
||
JAN2N3810
|
Raytheon | 完全替代 |
双极晶体管 - 双极结型晶体管(BJT) Small-Signal BJT
|
|||
JAN2N3810
|
Microchip | 完全替代 |
双极晶体管 - 双极结型晶体管(BJT) Small-Signal BJT
|
|||
|
|
Microchip | 完全替代 |
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
|
|||
JANTX2N3810
|
Semicoa Semiconductor | 完全替代 | TO-78 |
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
|
||
JANTX2N3810
|
Motorola | 完全替代 | TO-78 |
Trans GP BJT PNP 60V 0.05A 6Pin TO-78
|
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