Technical parameters/dissipated power: 4W (Ta), 150W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/dissipated power (Max): 4W (Ta), 150W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-267
External dimensions/packaging: TO-267
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7224
|
Microsemi | 类似代替 | TO-254-3 |
N沟道MOSFET N-CHANNEL MOSFET
|
||
IRFM150
|
Infineon | 功能相似 | TO-254 |
Power Field-Effect Transistor,
|
||
JANTX2N7218
|
Infineon | 功能相似 | TO-254 |
100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
|
||
JANTX2N7218
|
Omnirel Corp | 功能相似 |
100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review