Technical parameters/dissipated power: 150000 mW
Technical parameters/rise time: 190 ns
Technical parameters/Input capacitance (Ciss): 3700pF @25V(Vds)
Technical parameters/descent time: 130 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-254
External dimensions/packaging: TO-254
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N7224
|
Microchip | 完全替代 |
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
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JANTX2N7224
|
Microsemi | 完全替代 | TO-254-3 |
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
||
JANTXV2N7224
|
Microsemi | 完全替代 | TO-254-3 |
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
|
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