Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 40 @1.5A, 2V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-39 |
硅PNP功率晶体管 Silicon PNP Power Transistors
|
||
JANTX2N3867S
|
Microsemi | 功能相似 | TO-205 |
硅PNP功率晶体管 Silicon PNP Power Transistors
|
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